Progress of Epitaxial Chips to Enhance the Performance of Semiconductor Lasers

High power semiconductor laser key technologies include epitaxial growth of the semiconductor laser chip, the semiconductor laser chip packaging and optical alignment, shaping and laser technology integrated laser beam. The semiconductor laser 3000mw chip epitaxial growth techniques, epitaxial silicon structures research and design for the development of high-power semiconductor lasers play a crucial role, and therefore focus on the content of high-power semiconductor laser technology research.
In recent years, the United States, Germany and other developed countries to strengthen technical research investment of this technology, and has made significant progress, it is an international leader. Its recent research results in the following areas:
1, the use of aluminum-free active area effectively improved catastrophic optical damage the optical power density of the 100mw laser chip end surface of the output power and the life of the laser device has been significantly improved;

2, the use of strained quantum well structure, effectively improve the optical and electrical properties of high-power semiconductor lasers, expands the range of the emission wavelength GaAs-based material system, reducing the threshold current density of the device;

3, with the wide-waveguide large optical cavity structure design approach increases the size of the beam near-field mode, thereby reducing the output laser power density of the device, increasing the output power of the laser pumping and also make use of the device further increase in life expectancy.
Today, the semiconductor 1000mw green laser chip has been commercialized electro-optical conversion efficiency reached 60%, the electro-optical conversion efficiency of the laboratory device has reached more than 70%, believe that with further improvement of its technology. In the near future, the electro-optical conversion efficiency of the semiconductor laser chip will reach more than 85%.
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